TI · Thyristors & Power Discretes · MPN HGT1S7N60C3DS9A
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| Pd - Power Dissipation | - |
|---|---|
| Operating Temperature | - |
| Current - Collector(Ic) | 14A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 23nC |
| Reverse Recovery Time(trr) | - |
| Switching Energy(Eoff) | - |
| Turn-On Energy (Eon) | 165uJ |
14A 600V TO-263AB Single IGBTs RoHS