TI · Thyristors & Power Discretes · MPN HGT1S7N60B3D
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| Td(off) | 130ns |
|---|---|
| Pd - Power Dissipation | 60W |
| Td(on) | 26ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 14A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.1V@15V,7A |
| Gate Charge(Qg) | 30nC |
| Reverse Recovery Time(trr) | - |
| Switching Energy(Eoff) | 120uJ |
60W 14A 600V I2PAK(TO-262) Single IGBTs