TI · Thyristors & Power Discretes · MPN HGT1S20N60B3S
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| Operating Temperature | - |
|---|---|
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Turn-On Energy (Eon) | - |
40A 600V TO-263AB Single IGBTs