TI · Thyristors & Power Discretes · MPN HGT1S15N120C3S
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| Pd - Power Dissipation | 164W |
|---|---|
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 35A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 100nC |
| Turn-On Energy (Eon) | - |
164W 35A 1.2kV TO-263AB Single IGBTs