ST · Thyristors & Power Discretes · MPN STGYA50M120DF3
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| Td(off) | 258ns |
|---|---|
| Pd - Power Dissipation | 535W |
| Td(on) | 38ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 194nC |
| Reverse Recovery Time(trr) | 325ns |
| Switching Energy(Eoff) | 3.2mJ |
| Turn-On Energy (Eon) | 2mJ |
535W 100A 1.2kV FS (Field Stop) TO-247-3 Single IGBTs RoHS