ST STGWT40HP65FB

ST · Thyristors & Power Discretes · MPN STGWT40HP65FB

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Specifications

Td(off)142ns
Pd - Power Dissipation283W
Operating Temperature-55℃~+175℃
Current - Collector(Ic)40A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)107pF
Input Capacitance(Cies)5.412nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@1mA
Vce Saturation(VCE(sat))2V@40A,15V
Output Capacitance(Coes)198pF
Reverse Recovery Time(trr)140ns
Switching Energy(Eoff)363uJ

Technical details

283W 40A 650V TO-3P Single IGBTs RoHS

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