ST STGWT20H65FB

ST · Thyristors & Power Discretes · MPN STGWT20H65FB

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Specifications

Pd - Power Dissipation168W
Td(off)139ns
Operating Temperature-55℃~+175℃
Td(on)30ns
Current - Collector(Ic)40A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)60pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@1mA
Vce Saturation(VCE(sat))2V@20A,15V
Switching Energy(Eoff)170uJ
Turn-On Energy (Eon)77uJ
Input Capacitance(Cies)2.764nF

Technical details

168W 40A 650V TO-3P Single IGBTs RoHS

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