ST STGWF30NC60S

ST · Thyristors & Power Discretes · MPN STGWF30NC60S

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Specifications

Td(off)180ns
Pd - Power Dissipation79W
Td(on)21.5ns
Operating Temperature-55℃~+150℃@(Tj)
Current - Collector(Ic)35A
Collector-Emitter Breakdown Voltage (Vces)600V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.9V@15V,20A
Gate Charge(Qg)96nC
Switching Energy(Eoff)1.28mJ

Technical details

79W 35A 600V TO-3P Single IGBTs RoHS

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