ST STGWA80H65DFB

ST · Thyristors & Power Discretes · MPN STGWA80H65DFB

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Specifications

Td(off)280ns
Pd - Power Dissipation469W
Td(on)84ns
Operating Temperature-55℃~+175℃
Current - Collector(Ic)120A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)215pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@1mA
Vce Saturation(VCE(sat))2V@80A,15V
Reverse Recovery Time(trr)85ns
Switching Energy(Eoff)1.5mJ
Turn-On Energy (Eon)2.1mJ

Technical details

469W 120A 650V TO-247 Single IGBTs RoHS

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