ST STGWA75M65DF2

ST · Thyristors & Power Discretes · MPN STGWA75M65DF2

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Specifications

Td(off)125ns
Pd - Power Dissipation468W
Td(on)47ns
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)120A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance(Cies)-
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.1V@15V,75A
Gate Charge(Qg)225nC
Reverse Recovery Time(trr)165ns
Switching Energy(Eoff)2.54mJ

Technical details

468W 120A 650V FS (Field Stop) TO-247-3 Single IGBTs RoHS

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