ST STGWA60H65DFB

ST · Thyristors & Power Discretes · MPN STGWA60H65DFB

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Specifications

Td(off)210ns
Pd - Power Dissipation375W
Operating Temperature-55℃~+175℃@(Tj)
Td(on)66ns
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)650V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)6V@1mA
Vce Saturation(VCE(sat))1.6V@60A,15V
Reverse Recovery Time(trr)60ns
Switching Energy(Eoff)900uJ
Turn-On Energy (Eon)1.59mJ

Technical details

IGBT FS (Field Stop) 650V 80A 375W Through Hole TO-247

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