ST STGWA50IH65DF

ST · Thyristors & Power Discretes · MPN STGWA50IH65DF

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Specifications

Td(off)260ns
Pd - Power Dissipation300W
Td(on)-
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)100A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)81pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@1mA
Vce Saturation(VCE(sat))2V@50A,15V
Switching Energy(Eoff)284uJ
Turn-On Energy (Eon)-

Technical details

IGBT FS (Field Stop) 650V 100A 300W Through Hole TO-247

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