ST STGWA50HP65FB2

ST · Thyristors & Power Discretes · MPN STGWA50HP65FB2

No reviews yet — be the first to review ST STGWA50HP65FB2.

Specifications

Td(off)115ns
Pd - Power Dissipation272W
Td(on)-
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)86A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)78pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@1mA
Vce Saturation(VCE(sat))2V@50A,15V
Reverse Recovery Time(trr)140ns
Switching Energy(Eoff)580uJ

Technical details

IGBT FS (Field Stop) 650V 86A 272W Through Hole TO-247

Related Thyristors & Power Discretes