ST · Thyristors & Power Discretes · MPN STGWA50H65DFB2
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| Td(off) | 115ns |
|---|---|
| Pd - Power Dissipation | 272W |
| Operating Temperature | -55℃~+175℃ |
| Td(on) | 28ns |
| Current - Collector(Ic) | 86A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 2.928nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA |
| Vce Saturation(VCE(sat)) | 2V@50A,15V |
| Gate Charge(Qg) | 151nC@15V |
| Reverse Recovery Time(trr) | 92ns |
| Switching Energy(Eoff) | 580uJ |
IGBT 650V 86A 272W Through Hole TO-247