ST STGWA30IH65DF

ST · Thyristors & Power Discretes · MPN STGWA30IH65DF

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Specifications

Td(off)200ns
Pd - Power Dissipation180W
Td(on)-
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)60A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance(Cies)-
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.05V@15V,30A
Gate Charge(Qg)80nC
Switching Energy(Eoff)123uJ
Turn-On Energy (Eon)-

Technical details

180W 60A 650V FS (Field Stop) TO-247-3 Single IGBTs RoHS

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