ST · Thyristors & Power Discretes · MPN STGWA20H65DFB2
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| Td(off) | 78.8ns |
|---|---|
| Pd - Power Dissipation | 147W |
| Td(on) | 16ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 26pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA |
| Vce Saturation(VCE(sat)) | 2.1V@20A,15V |
| Reverse Recovery Time(trr) | 215ns |
| Switching Energy(Eoff) | 214uJ |
147W 40A 650V FS (Field Stop) TO-247-3 Single IGBTs RoHS