ST STGWA100H65DFB2

ST · Thyristors & Power Discretes · MPN STGWA100H65DFB2

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Specifications

Td(off)130ns
Pd - Power Dissipation441W
Td(on)30ns
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)145A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)165pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.5V@1mA
Vce Saturation(VCE(sat))2V@100A,15V
Reverse Recovery Time(trr)123ns
Switching Energy(Eoff)1.4mJ

Technical details

IGBT FS (Field Stop) 650V 145A 441W Through Hole TO-247

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