ST STGW80V60DF

ST · Thyristors & Power Discretes · MPN STGW80V60DF

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Specifications

Td(off)220ns
Pd - Power Dissipation469W
Td(on)60ns
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)120A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)220pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@1mA
Vce Saturation(VCE(sat))2.3V@80A,15V
Reverse Recovery Time(trr)60ns
Switching Energy(Eoff)1mJ

Technical details

IGBT FS (Field Stop) 600V 120A 469W Through Hole TO-247

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