ST · Thyristors & Power Discretes · MPN STGW80H65DFB
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| Td(off) | 280ns |
|---|---|
| Pd - Power Dissipation | 469W |
| Td(on) | 84ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 120A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 215pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA |
| Vce Saturation(VCE(sat)) | 2V@80A,15V |
| Reverse Recovery Time(trr) | 85ns |
| Switching Energy(Eoff) | 1.5mJ |
IGBT FS (Field Stop) 650V 120A 469W Through Hole TO-247