ST STGW60V60DF

ST · Thyristors & Power Discretes · MPN STGW60V60DF

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Specifications

Td(off)208ns
Pd - Power Dissipation375W
Td(on)60ns
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)170pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@1mA
Vce Saturation(VCE(sat))2.3V@60A,15V
Reverse Recovery Time(trr)74ns
Switching Energy(Eoff)550uJ

Technical details

IGBT FS (Field Stop) 600V 80A 375W Through Hole TO-247

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