ST STGW60H65FB

ST · Thyristors & Power Discretes · MPN STGW60H65FB

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Specifications

Td(off)210ns
Pd - Power Dissipation375W
Td(on)66ns
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)158pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)6V
Vce Saturation(VCE(sat))1.6V
Collector Cut-Off Current (Ices)25uA
Switching Energy(Eoff)900uJ

Technical details

IGBT FS (Field Stop) 650V 80A 375W Through Hole TO-247

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