ST STGW60H65DFB-4

ST · Thyristors & Power Discretes · MPN STGW60H65DFB-4

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Specifications

Pd - Power Dissipation375W
Td(off)281ns
Td(on)65ns
Operating Temperature-55℃~+175℃
Current - Collector(Ic)60A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)158nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@1mA
Vce Saturation(VCE(sat))2V@60A,15V
Reverse Recovery Time(trr)60ns
Switching Energy(Eoff)1.161mJ
Turn-On Energy (Eon)346uJ

Technical details

375W 60A 650V TO-247-4 Single IGBTs RoHS

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