ST STGW39NC60VD

ST · Thyristors & Power Discretes · MPN STGW39NC60VD

No reviews yet — be the first to review ST STGW39NC60VD.

Specifications

Td(off)178ns
Pd - Power Dissipation250W
Td(on)33ns
Operating Temperature-55℃~+150℃@(Tj)
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)298pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.75V@1mA
Vce Saturation(VCE(sat))2.4V@30A,15V
Reverse Recovery Time(trr)45ns
Switching Energy(Eoff)537uJ

Technical details

IGBT 600V 80A 250W Through Hole TO-247

Related Thyristors & Power Discretes