ST STGW30NC60KD

ST · Thyristors & Power Discretes · MPN STGW30NC60KD

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Specifications

Td(off)120ns
Pd - Power Dissipation200W
Td(on)29ns
Operating Temperature-55℃~+150℃@(Tj)
Current - Collector(Ic)60A
Collector-Emitter Breakdown Voltage (Vces)600V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.5V@250uA
Vce Saturation(VCE(sat))2.7V@20A,15V
Reverse Recovery Time(trr)40ns
Switching Energy(Eoff)435uJ
Turn-On Energy (Eon)350uJ

Technical details

IGBT 600V 60A 200W Through Hole TO-247

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