ST · Thyristors & Power Discretes · MPN STGW30M65DF2
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| Pd - Power Dissipation | 258W |
|---|---|
| Td(off) | 115ns |
| Operating Temperature | -55℃~+175℃ |
| Td(on) | 31.6ns |
| Current - Collector(Ic) | 60A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 46pF |
| Input Capacitance(Cies) | 2.49nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@500uA |
| Gate Charge(Qg) | 80nC@15V |
| Output Capacitance(Coes) | 143pF |
| Vce Saturation(VCE(sat)) | 2V@30A,15V |
258W 60A 650V TO-247 Single IGBTs RoHS