ST STGW20NC60VD

ST · Thyristors & Power Discretes · MPN STGW20NC60VD

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Specifications

Td(off)100ns
Pd - Power Dissipation200W
Td(on)31ns
Operating Temperature-55℃~+150℃@(Tj)
Current - Collector(Ic)60A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)50pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.75V@250uA
Vce Saturation(VCE(sat))2.5V@20A,15V
Reverse Recovery Time(trr)44ns
Switching Energy(Eoff)330uJ

Technical details

IGBT 600V 60A 200W Through Hole TO-247

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