ST STGW20IH125DF

ST · Thyristors & Power Discretes · MPN STGW20IH125DF

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Specifications

Td(off)106ns
Pd - Power Dissipation259W
Td(on)-
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)40A
Collector-Emitter Breakdown Voltage (Vces)1.25kV
Input Capacitance(Cies)1.29nF@25V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@0.5mA
Vce Saturation(VCE(sat))2.5V@15A,15V
Gate Charge(Qg)69nC@15A,15V
Switching Energy(Eoff)163uJ

Technical details

IGBT FS (Field Stop) 1.25kV 40A 259W Through Hole TO-247

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