ST STGW100H65FB2-4

ST · Thyristors & Power Discretes · MPN STGW100H65FB2-4

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Specifications

Td(off)141ns
Pd - Power Dissipation441W
Td(on)23ns
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)145A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance(Cies)-
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)288nC
Switching Energy(Eoff)-
Turn-On Energy (Eon)-

Technical details

441W 145A 650V FS (Field Stop) TO-247-4 Single IGBTs RoHS

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