ST STGP4M65DF2

ST · Thyristors & Power Discretes · MPN STGP4M65DF2

No reviews yet — be the first to review ST STGP4M65DF2.

Specifications

Pd - Power Dissipation68W
Td(off)86ns
Operating Temperature-55℃~+175℃
Td(on)12ns
Current - Collector(Ic)8A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)8pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@250uA
Vce Saturation(VCE(sat))2.1V@4A,15V
Reverse Recovery Time(trr)133ns
Switching Energy(Eoff)136uJ
Turn-On Energy (Eon)40uJ

Technical details

68W 8A 650V TO-220 Single IGBTs RoHS

Related Thyristors & Power Discretes