ST STGP19NC60KD

ST · Thyristors & Power Discretes · MPN STGP19NC60KD

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Specifications

Td(off)105ns
Pd - Power Dissipation125W
Td(on)30ns
Operating Temperature-55℃~+150℃@(Tj)
Current - Collector(Ic)35A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)127pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.5V@250uA
Vce Saturation(VCE(sat))2.75V@12A,15V
Reverse Recovery Time(trr)31ns
Switching Energy(Eoff)255uJ

Technical details

IGBT 600V 35A 125W Through Hole TO-220

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