ST · Thyristors & Power Discretes · MPN STGP10NB60S
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| Pd - Power Dissipation | 80W |
|---|---|
| Td(off) | 1.2us |
| Td(on) | 700ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 29A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.75V@15V,10A |
| Gate Charge(Qg) | 33nC |
| Switching Energy(Eoff) | 5mJ |
80W 29A 600V TO-220 Single IGBTs RoHS