ST STGP100N30

ST · Thyristors & Power Discretes · MPN STGP100N30

No reviews yet — be the first to review ST STGP100N30.

Specifications

Td(off)134ns
Pd - Power Dissipation250W
Td(on)-
Operating Temperature-55℃~+150℃@(Tj)
Current - Collector(Ic)90A
Collector-Emitter Breakdown Voltage (Vces)330V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.5V@15V,50A
Switching Energy(Eoff)-
Turn-On Energy (Eon)-

Technical details

250W 90A 330V TO-220 Single IGBTs RoHS

Related Thyristors & Power Discretes