ST STGF19NC60KD

ST · Thyristors & Power Discretes · MPN STGF19NC60KD

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Specifications

Td(off)105ns
Pd - Power Dissipation32W
Td(on)30ns
Operating Temperature-55℃~+150℃@(Tj)
Current - Collector(Ic)16A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)28pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)6.5V
Vce Saturation(VCE(sat))2V
Collector Cut-Off Current (Ices)150uA
Reverse Recovery Time(trr)31ns

Technical details

32W 16A 600V TO-220F-3 Single IGBTs RoHS

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