ST · Thyristors & Power Discretes · MPN STGF10NB60SD
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| Td(off) | 1.2us |
|---|---|
| Pd - Power Dissipation | 25W |
| Td(on) | 700ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 23A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.5V@0.25mA |
| Vce Saturation(VCE(sat)) | 1.75V@10A,15V |
| Reverse Recovery Time(trr) | 37ns |
| Switching Energy(Eoff) | 5mJ |
| Turn-On Energy (Eon) | 600uJ |
IGBT 600V 23A 25W Through Hole TO-220FP