ST STGF10H60DF

ST · Thyristors & Power Discretes · MPN STGF10H60DF

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Specifications

Td(off)103ns
Pd - Power Dissipation30W
Td(on)19.5ns
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)20A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)30pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@250uA
Vce Saturation(VCE(sat))1.95V@10A,15V
Reverse Recovery Time(trr)107ns
Switching Energy(Eoff)140uJ

Technical details

IGBT FS (Field Stop) 600V 20A 30W Through Hole TO-220FP

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