ST · Thyristors & Power Discretes · MPN STGE200NB60S
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| Td(off) | 2.4us |
|---|---|
| Pd - Power Dissipation | 600W |
| Td(on) | 64ns |
| Current - Collector(Ic) | 200A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 95pF |
| Input Capacitance(Cies) | 1.56nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3V@250uA |
| Gate Charge(Qg) | 560nC@15V |
| Output Capacitance(Coes) | 1.1nF |
| Vce Saturation(VCE(sat)) | 1.6V@100A,15V |
| Switching Energy(Eoff) | 59mJ |
600W 200A 600V ISOTOP-4 IGBT Modules RoHS