ST STGD8NC60KDT4

ST · Thyristors & Power Discretes · MPN STGD8NC60KDT4

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Specifications

Td(off)72ns
Pd - Power Dissipation62W
Td(on)17ns
Operating Temperature-55℃~+150℃@(Tj)
Current - Collector(Ic)15A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)19nC
Reverse Recovery Time(trr)23.5ns
Switching Energy(Eoff)-

Technical details

62W 15A 600V TO-252-2(DPAK) Single IGBTs RoHS

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