ST · Thyristors & Power Discretes · MPN STGD6M65DF2
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| Td(off) | 90ns |
|---|---|
| Pd - Power Dissipation | 88W |
| Td(on) | 15ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 12A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 11pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@250uA |
| Vce Saturation(VCE(sat)) | 2V@6A,15V |
| Reverse Recovery Time(trr) | 140ns |
| Switching Energy(Eoff) | 200uJ |
88W 12A 650V FS (Field Stop) TO-252 Single IGBTs RoHS