ST STGD5NB120SZT4

ST · Thyristors & Power Discretes · MPN STGD5NB120SZT4

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Specifications

Pd - Power Dissipation75W
Td(off)12.1us
Operating Temperature-55℃~+150℃
Td(on)690ns
Current - Collector(Ic)10A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)7pF
Input Capacitance(Cies)430pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2V@0.25mA
Output Capacitance(Coes)40pF
Vce Saturation(VCE(sat))2V@5A,15V
Switching Energy(Eoff)9mJ

Technical details

IGBT 1.2kV 10A 75W Surface Mount DPAK

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