ST STGD3NB60SDT4

ST · Thyristors & Power Discretes · MPN STGD3NB60SDT4

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Specifications

Pd - Power Dissipation48W
Td(off)3.4us
Operating Temperature-
Td(on)125us
Current - Collector(Ic)6A
Collector-Emitter Breakdown Voltage (Vces)600V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.5V@250uA
Vce Saturation(VCE(sat))1.5V@1.5A,15V
Reverse Recovery Time(trr)1.7us
Switching Energy(Eoff)1.15mJ
Turn-On Energy (Eon)1.1mJ

Technical details

IGBT 600V 6A 48W Surface Mount DPAK

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