ST STGD25N40LZAG

ST · Thyristors & Power Discretes · MPN STGD25N40LZAG

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Specifications

Td(off)8.4us
Pd - Power Dissipation150W
Td(on)1.1us
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)25A
Collector-Emitter Breakdown Voltage (Vces)435V
Reverse Transfer Capacitance (Cres)14pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.3V@1mA
Vce Saturation(VCE(sat))1.55V@10A,4.5V
Turn-On Energy (Eon)-
Input Capacitance(Cies)1.011nF

Technical details

150W 25A 435V DPAK(TO-252) Single IGBTs RoHS

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