ST STGD20N45LZAG

ST · Thyristors & Power Discretes · MPN STGD20N45LZAG

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Specifications

Td(off)4.6us
Pd - Power Dissipation150W
Td(on)1.1us
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)25A
Collector-Emitter Breakdown Voltage (Vces)450V
Reverse Transfer Capacitance (Cres)14pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.25V@4V,6A
Vce Saturation(VCE(sat))1.25V@6A,4V
Turn-On Energy (Eon)-
Input Capacitance(Cies)1.011nF

Technical details

IGBT 450V 25A Surface Mount DPAK

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