ST · Thyristors & Power Discretes · MPN STGD10NC60KDT4
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| Td(off) | 72ns |
|---|---|
| Pd - Power Dissipation | 62W |
| Td(on) | 17ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 20A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 8.5pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6.5V |
| Vce Saturation(VCE(sat)) | 2.2V |
| Collector Cut-Off Current (Ices) | 150uA |
| Reverse Recovery Time(trr) | 22ns |
62W 20A 600V DPAK Single IGBTs RoHS