ST STGD10NC60KDT4

ST · Thyristors & Power Discretes · MPN STGD10NC60KDT4

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Specifications

Td(off)72ns
Pd - Power Dissipation62W
Td(on)17ns
Operating Temperature-55℃~+150℃@(Tj)
Current - Collector(Ic)20A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)8.5pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)6.5V
Vce Saturation(VCE(sat))2.2V
Collector Cut-Off Current (Ices)150uA
Reverse Recovery Time(trr)22ns

Technical details

62W 20A 600V DPAK Single IGBTs RoHS

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