ST STGD10HF60KD

ST · Thyristors & Power Discretes · MPN STGD10HF60KD

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Specifications

Td(off)87ns
Pd - Power Dissipation62.5W
Td(on)9.5ns
Operating Temperature-55℃~+150℃@(Tj)
Current - Collector(Ic)18A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)10pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.5V@250uA
Vce Saturation(VCE(sat))2.5V@5A,15V
Reverse Recovery Time(trr)50ns
Switching Energy(Eoff)105uJ

Technical details

IGBT 600V 18A 62.5W Surface Mount DPAK

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