ST STGB6NC60HDT4

ST · Thyristors & Power Discretes · MPN STGB6NC60HDT4

No reviews yet — be the first to review ST STGB6NC60HDT4.

Specifications

Td(off)76ns
Pd - Power Dissipation56W
Td(on)12ns
Operating Temperature-55℃~+150℃@(Tj)
Current - Collector(Ic)15A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)5.5pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.75V@250uA
Vce Saturation(VCE(sat))2.5V@3A,15V
Reverse Recovery Time(trr)21ns
Switching Energy(Eoff)68uJ

Technical details

IGBT 600V 15A 56W Surface Mount D2PAK

Related Thyristors & Power Discretes