ST · Thyristors & Power Discretes · MPN STGB50H65FB2
No reviews yet — be the first to review ST STGB50H65FB2.
| Pd - Power Dissipation | 272W |
|---|---|
| Td(off) | 115ns |
| Td(on) | 28ns |
| Current - Collector(Ic) | 86A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 2.928nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA |
| Vce Saturation(VCE(sat)) | 1.9V@50A,15V |
| Switching Energy(Eoff) | 580uJ |
| Turn-On Energy (Eon) | 910uJ |
IGBT 650V 86A 272W Surface Mount D2PAK