ST · Thyristors & Power Discretes · MPN STGB40H65FB
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| Td(off) | 142ns |
|---|---|
| Pd - Power Dissipation | 283W |
| Td(on) | 40ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 107pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA |
| Vce Saturation(VCE(sat)) | 2V@40A,15V |
| Switching Energy(Eoff) | 363uJ |
| Turn-On Energy (Eon) | 498uJ |
IGBT FS (Field Stop) 650V 80A 283W Surface Mount D2PAK