ST STGB3NC120HDT4

ST · Thyristors & Power Discretes · MPN STGB3NC120HDT4

No reviews yet — be the first to review ST STGB3NC120HDT4.

Specifications

Td(off)118ns
Pd - Power Dissipation75W
Td(on)15ns
Operating Temperature-55℃~+150℃@(Tj)
Current - Collector(Ic)14A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)6pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2V@250uA
Vce Saturation(VCE(sat))2.8V@3A,15V
Reverse Recovery Time(trr)51ns
Switching Energy(Eoff)290uJ

Technical details

IGBT 1.2kV 14A 75W Surface Mount D2PAK

Related Thyristors & Power Discretes