ST STGB30NC60KT4

ST · Thyristors & Power Discretes · MPN STGB30NC60KT4

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Specifications

Td(off)120ns
Pd - Power Dissipation185W
Operating Temperature-55℃~+150℃@(Tj)
Td(on)29ns
Current - Collector(Ic)60A
Collector-Emitter Breakdown Voltage (Vces)600V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.7V@15V,20A
Gate Charge(Qg)96nC

Technical details

185W 60A 600V D2PAK Single IGBTs RoHS

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