ST · Thyristors & Power Discretes · MPN STGB30M65DF2
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| Td(off) | 115ns |
|---|---|
| Pd - Power Dissipation | 258W |
| Td(on) | 31.6ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 60A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 46pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V |
| Vce Saturation(VCE(sat)) | 1.55V |
| Collector Cut-Off Current (Ices) | 25uA |
| Reverse Recovery Time(trr) | 140ns |
IGBT FS (Field Stop) 650V 60A 258W Surface Mount D2PAK